(China (Mainland))
Product Summary
The K4E661612D-TP50 is a 4194304×16 bit extended data out mode CMOS DRAM. Extended data out mode offers high speed random access of memory cells within the sam row refresh cycle, access time, power consumption are optional features of the device. The K4E661612D-TP50 has CAS-before-RAS refresh, RAS-only refresh and hidden refresh capabilities. Furthermore, self-refresh operation is available in L-version. The K4E661612D-TP50 is fabricated using advanced CMOS process to realize high band-width, low power consumption and high reliability.
Parametrics
K4E661612D-TP50 absolute maximum ratings: (1)Voltage on any pin relative to VSS, VIN, VOUT: -0.5 to +4.6 V; (2)Voltage on VCC supply relative to VSS, VCC: -0.5 to +4.6 V; (3)Storage Temperature, Tstg: -55 to +150 ℃; (4)Power Dissipation, PD: 1 W; (5)Short Circuit Output Current, IOS Address: 50 mA.
Features
K4E661612D-TP50 features: (1)Extended Data Out Mode operation; (2)2 CAS Byte/Word Read/Write operation; (3)CAS-before-RAS refresh capability; (4)RAS-only and Hidden refresh capability; (5)Fast parallel test mode capability; (6)Self-refresh capability (L-veronly); (7)LVTTL (3.3V) compatible input sandoutputs; (8)Early Write or output enable controlled write; (9)JEDEC Standard pinout; (10)Available in Plastic TSOP(II) packages; (11)+3.3V±0.3V power supply; (12)Industrial Temperature operating (-40~85℃).
Diagrams
 |
 K4E640411D |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
K4E640412D |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
K4E640412E |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
K4E640812B |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
K4E640812C |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
K4E640812E |
Other |
|
Data Sheet |
Negotiable |
|
||||
