Product Summary
The KDS184-RTK/P is a silicon epitaxial planar diode.
Parametrics
KDS184-RTK/P absolute maximum ratings: (1)Peak reverse voltage, VRM: 85V; (2)Reverse voltage, VR: 80V; (3)Peak forward current, IFM: 300mA; (4)Average forward current, IO: 100mA; (5)Surge current, IFSM: 2A; (6)Power dissipation, PD: 150mW; (7)Junction temperature, Tj: 150℃; (8)Storage temperature range, Tstg: -55 to 150℃.
Features
KDS184-RTK/P features: (1)Small package; (2)Low forward voltage; (3)Fast reverse recovery time; (4)Small total capacitance.
Diagrams
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![]() KDS1001AF2 |
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![]() KDS11 |
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![]() KDS1102RSWC12CB |
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![]() SWITCH DETECTOR SPST/NO W/WIRES |
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![]() KDS114WS |
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![]() Negotiable |
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![]() KDS135 |
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![]() Negotiable |
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![]() KDS142E |
![]() Other |
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![]() Negotiable |
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