Product Summary

The KDS184-RTK/P is a silicon epitaxial planar diode.

Parametrics

KDS184-RTK/P absolute maximum ratings: (1)Peak reverse voltage, VRM: 85V; (2)Reverse voltage, VR: 80V; (3)Peak forward current, IFM: 300mA; (4)Average forward current, IO: 100mA; (5)Surge current, IFSM: 2A; (6)Power dissipation, PD: 150mW; (7)Junction temperature, Tj: 150℃; (8)Storage temperature range, Tstg: -55 to 150℃.

Features

KDS184-RTK/P features: (1)Small package; (2)Low forward voltage; (3)Fast reverse recovery time; (4)Small total capacitance.

Diagrams

KDS184-RTK/P package diagram

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