IRF640N

HEXFET Power MOSFET, to-220, 18A

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Price:: US $0.35~0.40 / piece [Get Latest Price]

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PartNumber:: IRF640N

Brand:: International Rectifier - IR | Pack: TO | D/C: 08+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
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Products Upload time: 2011-07-23

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Part Number:IRF640N
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Product Summary

The IRF640N is a HEXFET Power MOSFET from International Rectifier which utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

IRF640N absolute maximum ratings: (1)ID@T=25℃ Continuous Drain Current, VGS@10V: MAX=18A; (2)ID@T=100℃ Continuous Drain Current, VGS@10V: MAX=13A; (3)IDM Pulsed Drain Current: MAX=72A; (4)PD@T=25℃ Power Dissipation: 150W; (5)Linear Derating Factor: 1.0W/℃; (6)VGS Gate-to-Source Voltage: ±20V; (7)EAS Single Pulse Avalanche Energy: 247mJ; (8)IAR Avalanche Current: 18A; (9)EAR Repetitive Avalanche Energy: 15mJ; (10)dv/dt Peak Diode Recovery dv/dt: 8.1V/ns; (11)Soldering Temperature, for 10 seconds: 300℃(1.6mm from case ); (12)Mounting torque, 6-32 or M3 srew: 10 lbf.in (1.1N.m).

Features

IRF640N features: (1)Advanced Process Technology; (2)Dynamic dv/dt Rating; (3)175℃ Operating Temperature; (4)Fast Switching; (5)Fully Avalanche Rated; (6)Ease of Paralleling; (7)Simple Drive Requirements.