Product Summary

The BAS116-E6327 is a Silicon Low Leakage Diode.

Parametrics

BAS116-E6327 maximum ratings: (1)Diode reverse voltage VR 80 V; (2)Peak reverse voltage VRM: 85 mA; (3)Forward current IF: 250 mA; (4)Non-repetitive peak surge forward current IFSM: when t = 1 μs 4.5A; when t=1s 0.5A; (5)Total power dissipation TS ≤ 54℃ Ptot: 370 mW; (6)Junction temperature Tj: 150 ℃; (7)Storage temperature Tstg: -65 to 150 ℃.

Features

BAS116-E6327 features: (1)Low-leakage applications; (2)Medium speed switching times; (3)Pb-free (RoHS compliant) package1); (4)Qualified according AEC Q101.

Diagrams

BAS116-E6327 Test circuit for reverse recovery time

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