(China (Mainland))
Product Summary
The 02CZ6.8-X is a NPN Silicon Germanium RF Transistor.
Parametrics
02CZ6.8-X maximum ratings: (1)Collector-emitter voltage VCEO: 2.3 V; (2)Collector-emitter voltage VCES: 7.5V; (3)Collector-base voltage VCBO: 7.5; (4)Emitter-base voltage VEBO: 1.2; (5)Collector current IC: 80 mA; (6)Base current IB: 3A; (7)Total power dissipation TS ≤ 95℃ Ptot: 185 mW; (8)Junction temperature Tj: 150 ℃; (9)Ambient temperature TA: -65 to 150 ℃; (10)Storage temperature Tstg: -65 to 150 ℃.
Features
02CZ6.8-X features: (1)High gain low noise RF transistor; (2)Provides outstanding performance for a wide range of wireless applications; (3)Ideal for CDMA and WLAN applications; (4)Outstanding noise figure F = 0.7 dB at 1.8 GHz. Outstanding noise figure F = 1.3 dB at 6 GHz; (5)Maximum stable gain. Gms = 21.5 dB at 1.8 GHz. Gma = 11 dB at 6 GHz; (6)Gold metallization for extra high reliability.
Diagrams
