Product Summary
The IRFZ44 Advanced HEXFET Power MOSFET from International Rectifier utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that IRFZ44 is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Parametrics
IRFZ44 absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 49 A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 35 A; (3)Pulsed Drain Current: 160 A; (4)PD @TC = 25℃ Power Dissipation: 94 W; (5)Linear Derating Factor: 0.63 W/℃; (6)Gate-to-Source Voltage: ± 20 V; (7)Avalanche Current: 25 A; (8)Repetitive Avalanche Energy: 9.4 mJ; (9)Peak Diode Recovery dv/dt: 5.0 V/ns; (10)Operating Junction and Storage Temperature Range: -55 to + 175 ℃; (11)Soldering Temperature, for 10 seconds: 300 ℃ (1.6mm from case ).
Features
IRFZ44 features: (1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)Dynamic dv/dt Rating; (4)175℃ Operating Temperature; (5)Fast Switching; (6)Fully Avalanche Rated.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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IRFZ44 |
Vishay/Siliconix |
MOSFET N-Chan 60V 50 Amp |
Data Sheet |
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IRFZ44, SiHFZ44 |
Other |
Data Sheet |
Negotiable |
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IRFZ44E |
MOSFET N-CH 60V 48A TO-220AB |
Data Sheet |
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IRFZ44EL |
MOSFET N-CH 60V 48A TO-262 |
Data Sheet |
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IRFZ44CN |
Other |
Data Sheet |
Negotiable |
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IRFZ44ELPbF |
International Rectifier |
MOSFET N-CH 60V 48A TO-262 |
Data Sheet |
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IRFZ44ESTRLPBF |
International Rectifier |
MOSFET MOSFT 60V 48A 23mOhm 40nC |
Data Sheet |
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IRFZ44EPBF |
International Rectifier |
MOSFET MOSFT 60V 48A 23mOhm 40nC |
Data Sheet |
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