Product Summary

The IRFPF50 is a HEXFET power MOSFET. It provides the desinger with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package of IRFPF50 is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of IRFPF50 most safety specifications.

Parametrics

IRFPF50 absolute maximum ratings: (1)ID @ TC=25 ℃, continuous drain current, VGS @ 10 V: 6.7 A; (2)ID @ TC=100 ℃, continuous drain current, VGS @ 10 V: 4.2 A; (3)pulse drain current: 27 A; (4)PD @ TC=25 ℃, power dissipation: 190 W; (5)linear derating factor: 1.5 W/℃; (6)gate-to-source voltage: ±20 V; (7)single pulse avalanche energe: 880 mJ; (8)avalanche current: 6.7 A; (9)repetitive avalanche energe: 19 mJ; (10)peak diode recovery dv/dt: 1.5 V/ns; (11)operating junction and storage temperature range: -55 to +150℃.

Features

IRFPF50 features: (1)dynamic dv/dt rating; (2)repetitive avalanche rate; (3)isolated central mounting hole; (4)fast switching; (5)ease of paralleling; (6)simple drive requirements.

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRFPF50
IRFPF50
Vishay/Siliconix
MOSFET N-Chan 900V 6.7 Amp
Data Sheet
0-331: $5.83
331-500: $5.34
500-1000: $5.12
IRFPF50, SiHFPF50
IRFPF50, SiHFPF50
Other

Data Sheet
Negotiable 
IRFPF50PBF
IRFPF50PBF
Vishay/Siliconix
MOSFET N-Chan 900V 6.7 Amp
Data Sheet
0-1: $3.10
1-10: $2.48
10-100: $2.26
100-250: $2.04