(China (Mainland))
Product Summary
The FF300R12KE3 is an IGBT-moulde.
Parametrics
FF300R12KE3 absolute maximum ratings: (1)collertor-emitter voltage: 1200 V at Tvj=25℃; (2)DC-collector current: 300 A at TC=80℃, Tvj=150℃, 440 A at TC=25℃, Tvj=150℃; (3)repetitive peak collector current: 600 A; (4)total power dissipation: 1450 W; (5)gate-emitter peak voltage: +/-20 V.
Features
FF300R12KE3 characteristic values: (1)collector-emitter saturation voltage: 1.70 V at Tvj=25℃; (2)gate threshold voltage: 5.8 V at Ic=12.0 mA, VCE=VGE, Tvj=25℃; (3)gate charge: 2.80 μC at VGE= -15 V to +15 V; (4)internal gate resistor: 2.5 Ω; (5)input capacitance: 21.0 nF at f=1 MHz, Tvj=25℃, VCE=25 V, VGE=0 V; (6)reverse transfer capacitance: 0.85 nF at f=1 MHz, Tvj=25℃, VCE=25 V, VGE=0 V; (7)collector-emitter leakage current: 400 nA at VCE=0V, VGE=20 V, Tvj=25℃.
Diagrams
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 FF300R12KE3 |
Infineon Technologies |
IGBT Transistors 1200V 300A DUAL |
Data Sheet |
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FF300R12KE3_B2 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 480A |
Data Sheet |
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