(China (Mainland))
Product Summary
The 1SS389 is a silicon epitaxial schottky barrier type TOSHIBA diode. It has high speed switching application.
Parametrics
1SS389 maximum ratings: (1)Maximum (peak) reverse Voltage VRM: 15 V; (2)Reverse voltage VR: 10 V; (3)Maximum (peak) forward current IFM: 200 mA; (4)Average forward current IO: 100 mA; (5)Surge current (10ms) IFSM: 1 A; (6)Power dissipation P: 150 mW; (7)Junction temperature Tj: 125 ℃; (8)Storage temperature range Tstg: -55 to 125 ℃; (9)Operating temperature range Topr: -40 to 100 ℃.
Features
1SS389 features: (1)Small package; (2)Low forward voltage: VF = 0.23V (typ.) @IF = 5mA.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 1SS389 |
Other |
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Data Sheet |
Negotiable |
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1SS389(TL3,F,D) |
Toshiba |
Rectifiers High Speed 0.23V VF 15Vrm 10Vr 200mA |
Data Sheet |
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1SS389(TL3,F,T) |
Toshiba |
Rectifiers Vr=10V Io=0.1A 2Pin |
Data Sheet |
Negotiable |
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